Effect of in situ Pt bottom electrode deposition and of Pt top electrode preparation on PZT thin films properties

Highly (1 0 0) oriented Pb(Zr, Ti)O3 (PZT) thin films have been grown in situ at 500 °C on Pt electrode by rf magnetron sputtering. The Pt bottom electrode has been sputtered in situ and influence of Pt deposition temperature on structural and electrical properties of PZT films have been investigated. The effect of preparation conditions of Pt top electrodes has also been examined. It was found that properties of PZT thin films were strongly dependent on the deposition temperature of the bottom electrode and on both the rf power and plasma composition during the sputtering of the top electrode.