Investigation of RF power effect on the deposition and properties of PECVD TiSi2 thin film

TiSi2 thin films are deposited on Si(1 0 0) substrate by inductively coupled RF plasma CVD at RF power ranges from 20 to 400 W. TiCl4/H2 are used as the feed gases. As the RF power increases up to 200 W at 850 °C, the morphology of the film surface and the TiSi2/Si interface improves due to the enhancement of H2 and TiCl4 dissociation into the atomic species in plasma. At high RF powers, 200–400 W, the deposition of titanium-rich silicides such as Ti5Si3 and TiSi is observed. Optical emissions data and thermodynamic calculations are in good agreement with each other and provide rational explanations for the observed phenomena.