Title of article :
PLD growth of ZnO film free from deep level emission using (La,Sr)TiO3 substrate
Author/Authors :
Masanori Sugiura، نويسنده , , Yuu Nakashima، نويسنده , , Takuya Nakasaka، نويسنده , , Takeshi Kobayashi، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Abstract :
This paper describes the pulsed laser deposition (PLD) technology of making ZnO thin films free from deep level emission (a problem of conventionaly grown ZnO films). A visible broad peak (deep level emission) is often seen in the ZnO photoluminescence (PL) spectrum and also a sharp exciton peak. ZnO films PLD-grown on La-doped (0.5%) SrTiO3 substrates were compared with those grown on SrTiO3 substrates. When grown on La-doped SrTiO3 substrate, the deep level emission disappeared almost completely. Even when (LaSr)TiO3 film was inserted between the ZnO film and SrTiO3 substrate, deep level emission was suppressed to a large extent. Using the present result, we fabricated a NiO/ZnO/LaxSr1−xTiO3 structure and characterized it.
Keywords :
Photoluminescence , Deep level , Sr)TiO3 , Pin diode , ZnO , (La
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science