Title of article :
Investigation of preparation and characterization of GaN films on sapphire (0001) substrates
Author/Authors :
Yingge Yang، نويسنده , , Honglei Ma، نويسنده , , Cheng-Shan Xue، نويسنده , , Hui-Zhao Zhuang، نويسنده , , Xiaotao Hao and Xiangdong Liu، نويسنده , , Jin Ma، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Abstract :
Gallium nitride (GaN) films were prepared on sapphire (0001) substrates by post-nitridation technique. XRD, XPS, and TEM measurement results indicate that the polycrystalline GaN with hexagonal wurtzite structure was successfully grown. Intense room-temperature photoluminescence peaked at 466 nm of the films is observed.
Keywords :
Sapphire (0001) substrates , GaN films , Blue emission , Photoluminescence
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
