Author/Authors :
S.B Cho، نويسنده , , H.K. Shon، نويسنده , , H.J. Kang، نويسنده , , T.E Hong، نويسنده , , H.K. Kim ، نويسنده , , H.I Lee، نويسنده , , K.J. Kim، نويسنده , , D.W. Moon، نويسنده ,
Abstract :
SIMS quantification and depth scale calibration has been based on ion implanted standards. In this work, the feasibility of using multiple delta layer reference materials for quantitative SIMS depth profiling is tested and presented. Preliminary studies on application of multiple As delta layer Si thin films to shallow junction analysis will be presented and discussed.
Keywords :
As doping , Delta layer , MEIS , RSF , SIMS
