Title of article
Characteristics of ultra-low-energy Cs+ ion beam bombardments
Author/Authors
Zhanping Li، نويسنده , , Takahiro Hoshi، نويسنده , , Retsu Oiwa، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
6
From page
323
To page
328
Abstract
Shallow arsenic implants and extra-thin film (SiON) are routinely analyzed by modern SIMS under ultra-low-energy Cs+ ion beam bombardment, either at oblique (<60°) or glancing (∼80°) incident angle [J. Surf. Anal. 6 (3) (1999) A-3; in: A. Benninghoven, et al. (Eds.), Proceedings of the SIMS XII, Elsevier, Amsterdam, 1999, p. 549]. This article investigates the basic aspects of ultra-low-energy Cs+ ion beam bombardment using a delta-doped boron sample (four layers, 5.3 nm per cycle), such as useful yield, depth resolution and changes in sputter rate in the near surface region. Our results indicated that there is a magic incidence angle (∼70°) at which the depth resolution is very poor, and at glancing (∼80°) incident angle the best depth resolution is observed.
Keywords
Depth resolution , Scale distortion , Useful yield , Ultra-low-energy probe , Shallow implants , Delta-doped B
Journal title
Applied Surface Science
Serial Year
2003
Journal title
Applied Surface Science
Record number
998449
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