Quantitative depth profiling of nitrogen in ultrathin oxynitride film with low energy SIMS

It was shown that the thickness of ultrathin gate oxides measured with low energy O2+ SIMS shows linear relationships with medium energy ion scattering spectroscopy (MEIS) and HRTEM results in the range of 9–2.5 nm. For quantitative N depth profiling, N profiles in ∼3 nm Si oxynitrides were measured by low energy O2+ and Cs+ SIMS and calibrated with MEIS analysis results of the thickness and the N areal density. N SIMS profiles observed for low energy O2+ and Cs+ SIMS showed some difference in the shape and distribution.