Abstract :
Adsorbed structures of Te on Si 001.surface have been studied by low energy electron diffraction LEED.and Auger
electron spectroscopy AES.. As elevating the temperature after the deposition of Te onto the Si 001.single-domain 1=2
surface by a few monolayers at room temperature, 1=1, 2=1, 1=3 and double-domain 1=2 LEED patterns were
observed at about 3508C, 6008C, 6808C and 8008C, respectively. During the phase transitions from 1=1 to 2=1 and from
1=3 to 1=2 clean surface, continuous shifts of diffraction spots were observed. This phenomenon is explained by the
formation of the domain walls. We considered a one-dimensional chain of scatterers on the surface which had a statistical
distribution of domain length, and calculated the structure factor with a simple kinematic scattering based on the theory
proposed by J.E. Houston and R.L. Park. The results of calculated intensity distributions were in good agreement with
experiment. q1998 Elsevier Science B.V. All rights reserved.
Keywords :
Silicon , Tellurium , Low energy electron diffraction LEED. , Spot splitting , Domain wall