• Title of article

    Domain wall structure of TerSi 001/ surface studied by LEED

  • Issue Information
    روزنامه با شماره پیاپی سال 1998
  • Pages
    6
  • From page
    112
  • To page
    117
  • Abstract
    Adsorbed structures of Te on Si 001.surface have been studied by low energy electron diffraction LEED.and Auger electron spectroscopy AES.. As elevating the temperature after the deposition of Te onto the Si 001.single-domain 1=2 surface by a few monolayers at room temperature, 1=1, 2=1, 1=3 and double-domain 1=2 LEED patterns were observed at about 3508C, 6008C, 6808C and 8008C, respectively. During the phase transitions from 1=1 to 2=1 and from 1=3 to 1=2 clean surface, continuous shifts of diffraction spots were observed. This phenomenon is explained by the formation of the domain walls. We considered a one-dimensional chain of scatterers on the surface which had a statistical distribution of domain length, and calculated the structure factor with a simple kinematic scattering based on the theory proposed by J.E. Houston and R.L. Park. The results of calculated intensity distributions were in good agreement with experiment. q1998 Elsevier Science B.V. All rights reserved.
  • Keywords
    Silicon , Tellurium , Low energy electron diffraction LEED. , Spot splitting , Domain wall
  • Journal title
    Applied Surface Science
  • Serial Year
    1998
  • Journal title
    Applied Surface Science
  • Record number

    998520