Title of article :
Domain wall structure of TerSi 001/ surface studied by LEED
Issue Information :
روزنامه با شماره پیاپی سال 1998
Pages :
6
From page :
112
To page :
117
Abstract :
Adsorbed structures of Te on Si 001.surface have been studied by low energy electron diffraction LEED.and Auger electron spectroscopy AES.. As elevating the temperature after the deposition of Te onto the Si 001.single-domain 1=2 surface by a few monolayers at room temperature, 1=1, 2=1, 1=3 and double-domain 1=2 LEED patterns were observed at about 3508C, 6008C, 6808C and 8008C, respectively. During the phase transitions from 1=1 to 2=1 and from 1=3 to 1=2 clean surface, continuous shifts of diffraction spots were observed. This phenomenon is explained by the formation of the domain walls. We considered a one-dimensional chain of scatterers on the surface which had a statistical distribution of domain length, and calculated the structure factor with a simple kinematic scattering based on the theory proposed by J.E. Houston and R.L. Park. The results of calculated intensity distributions were in good agreement with experiment. q1998 Elsevier Science B.V. All rights reserved.
Keywords :
Silicon , Tellurium , Low energy electron diffraction LEED. , Spot splitting , Domain wall
Journal title :
Applied Surface Science
Serial Year :
1998
Journal title :
Applied Surface Science
Record number :
998520
Link To Document :
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