Author/Authors :
A.A. Evtukh، نويسنده , , N.I. Klyui، نويسنده , , V.G. Litovchenko، نويسنده , , Yu.M. Litvin، نويسنده , , O.B. Korneta، نويسنده , , V.M. Puzikov، نويسنده , , A.V. Semenov، نويسنده ,
Abstract :
The emission properties of silicon carbide films were investigated. The SiC films were deposited from separated ion beams. The deposition of the films on silicon tips allows us to improve field emission strongly. The doping of silicon carbide films with rare-earth elements has sufficient influence on electron field emission parameters. The shape and the radius curvature of the tips are very important at electron emission.
Keywords :
Rare-earth elements , Doping , Pr , ER , Field emission , Silicon carbide
