Title of article
Zinc determination in A3B5 semiconductors
Author/Authors
Kazantsev D. Yu، نويسنده , , A.P. Kovarsky، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
3
From page
826
To page
828
Abstract
The results of zinc ion yield measurements obtained by using GaX matrices (X ¼ N, P, As, Sb) under both cesium and oxygen
primary ion bombardments are investigated. Excellent detection limits are achieved under O2þ primary ion bombardment
monitoring the GaZnþ secondary. The swelling dependence on analytical conditions and accuracy of measurements of zinc
implanted GaSb samples is investigated.
# 2004 Published by Elsevier B.V.
Keywords
Emission of ZnCs? , SIMS , ZnGa? from GaB5
Journal title
Applied Surface Science
Serial Year
2004
Journal title
Applied Surface Science
Record number
998603
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