Title of article
Optical phonons in InAs and AlAs quantum dot structures
Author/Authors
A.G. Milekhin، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
5
From page
45
To page
49
Abstract
We present a comparative study of InAs/AlAs periodical structures with InAs and AlAs quantum dots (QD’s) using infrared
and Raman spectroscopies. Raman spectra were measured in a backscattering geometry using a micro-Raman setup to directly
determine the transverse optical (TO) and longitudinal optical (LO) resonance frequencies. Remarkable features observed in the
Raman spectra correspond to LO and TO phonons localised in AlAs and InAs QD’s. The observed phonon lines are shifted from
their bulk values due to tensile and compressive strain in AlAs and InAs QD’s. The experimental IR spectra reveal the only
minima at the TO phonon frequency positions attributed to the Fro¨hlich modes. IR spectra were calculated supposing that the QD
structures are described by the effective dielectric function within Bruggeman approximation taking into account dielectric
properties of matrix and QD’s materials and the volume fraction of QD’s. Resonance frequencies were taken from an analysis of
Raman spectra. A good correspondence of the experimental and calculated IR spectra proves the validity of the approach used.
# 2004 Elsevier B.V. All rights reserved.
Keywords
quantum dots , confinement , Phonons , Raman spectroscopy , infrared spectroscopy
Journal title
Applied Surface Science
Serial Year
2004
Journal title
Applied Surface Science
Record number
998694
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