Title of article :
Optical properties of zincblende GaN/BN cylindrical nanowires
Author/Authors :
E.W.S. Caetano، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Abstract :
We calculate the confined exciton energy of zincblende GaN/BN cylindrical nanowires using a two-parameter variational
approach within the effective mass approximation. Feasibility of light emission in the 300 700 nm range is attained, depending
both on the nanowire radius and the graded interface thickness. It is shown that in actual zincblende GaN/BN nanowire samples,
the existence of non-abrupt interfaces can blue shift the exciton recombination energy up to 100 meV for non-abrupt interface
thickness of just a few monolayers.
# 2004 Published by Elsevier B.V.
Keywords :
Gallium nitride , Boron nitride , quantum wires , Optical properties , Excitons
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science