Title of article :
Optical properties of zincblende GaN/BN cylindrical nanowires
Author/Authors :
E.W.S. Caetano، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
4
From page :
50
To page :
53
Abstract :
We calculate the confined exciton energy of zincblende GaN/BN cylindrical nanowires using a two-parameter variational approach within the effective mass approximation. Feasibility of light emission in the 300 700 nm range is attained, depending both on the nanowire radius and the graded interface thickness. It is shown that in actual zincblende GaN/BN nanowire samples, the existence of non-abrupt interfaces can blue shift the exciton recombination energy up to 100 meV for non-abrupt interface thickness of just a few monolayers. # 2004 Published by Elsevier B.V.
Keywords :
Gallium nitride , Boron nitride , quantum wires , Optical properties , Excitons
Journal title :
Applied Surface Science
Serial Year :
2004
Journal title :
Applied Surface Science
Record number :
998695
Link To Document :
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