Author/Authors :
H. Nohira، نويسنده , , T. Yamada and T. Shiraishi، نويسنده , , T. Nakamura، نويسنده , , K. Takahashi، نويسنده , , M. Takeda، نويسنده , , S. Ohmi، نويسنده , , H. IWAI، نويسنده , , T. Hattori، نويسنده ,
Abstract :
The composition of transition layer (TL) formed between Lu2O3 and Si(1 0 0) substrate was determined non-destructively by applying newly developed depth profiling method to the angle-resolved Si 2p and Lu 4d photoelectron spectra. The conduction and valence band alignments of Lu2O3 with respect to Si(1 0 0) were also determined from the measurement of O 1s photoelectron spectra and valence band spectra.
Keywords :
High-K , Lu2O3 , transition layer , Silicate , XPS , Depth profiling
