Author/Authors :
Ichirou Takahashi، نويسنده , , Hiroyuki Sakurai، نويسنده , , Atsuhiko Yamada، نويسنده , , Kiyoshi Funaiwa، نويسنده , , Kentarou Hirai، نويسنده , , Shinichi Urabe، نويسنده , , Tetsuya Goto، نويسنده , , Masaki Hirayama، نويسنده , , Akinobu Teramoto * ، نويسنده , , Shigetoshi Sugawa، نويسنده , , Tadahiro Ohmi، نويسنده ,
Abstract :
A low dielectric constant ferroelectric Sr2(Ta1−x,Nbx)2O7 (STN) film formation technology which is applied to floating gate type ferroelectric random access memory (FFRAM) has been developed. The high ferroelectric performance of the STN capacitor has been achieved by plasma PVD and an oxygen radical treatment using microwave-excited (2.45 GHz) high-density (>1012 cm−3) low electron temperature (<1 eV) Kr/O2 plasma. Oxygen radical treatment can effectively oxidize ferroelectric film at 400 °C.
Keywords :
Oxygen radical treatment , Low temperature treatment , Kr/O2 plasma , Sr2(Ta1?x , Nbx)2O7 (STN) , Oxidizing ferroelectric effectively
