Title of article
Improvement of hot-carrier-reliability by deuterium termination of Si/SiO2 interface defects
Author/Authors
H. Takahashi، نويسنده , , H. Yamada-Kaneta، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
4
From page
347
To page
350
Abstract
We present the improvement of hot-carrier-reliability by deuterium annealing at the temperatures ranging from 430 to 460 °C in the case of CMOS transistors of the design rule of 0.13 μm. By means of secondary ion mass spectroscopy (SIMS) and ESR measurements, we confirm that this improvement is caused by the termination of the interface defects by deuterium atoms.
Keywords
Hot-carrier-reliability , Hydrogen termination , deuterium , Silicon , Interface defect
Journal title
Applied Surface Science
Serial Year
2003
Journal title
Applied Surface Science
Record number
998773
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