Formation and characteristics of 100-nm scale GaAs quantum wires by selective area MOVPE

We fabricated quantum wires (QWRs) with sub-micron wire width using GaAs/AlGaAs selectively doped structures grown by selective area metalorganic vapor phase epitaxy (SA-MOVPE) on (0 0 1) masked GaAs substrates partially covered by SiON. From the measurement of a two-terminal conductance as a function of geometrical wire width, QWRs with effective channel width <100 nm are formed without application of any gate bias. The magnetoresistance measurement at 1.7 K also suggests the formation of narrow QWRs, although it also indicates a presence of potential fluctuation along the QWRs. The effective channel width of present QWRs are much narrower than the previously reported values (∼300 nm) of those formed by SA-MOVPE.