Title of article
Composition dependence of InP/GaxIn1−xAsyP1−y/InP interface structures analyzed by X-ray CTR scattering measurements
Author/Authors
M. Tabuchi، نويسنده , , H. Kyouzu، نويسنده , , M. Takemi، نويسنده , , Y. Takeda، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
6
From page
526
To page
531
Abstract
Composition and stress dependences of InP/GaxIn1−xAsyP1−y/InP interface structures were investigated using X-ray crystal truncation rod (CTR) scattering measurements, in order to realize why group-III atoms were always distributed widely around hetero-interfaces between InP and GaInAs(P). The result showed that the change of the Ga and As compositions to keep the lattice constants and the change of the stress to keep the Ga composition did not affect the degree of the distribution of the group-III atoms. It suggested that the distribution of the group-III atoms was due neither to mixing of In and Ga nor to relaxing local stress at around the interfaces. The distribution was probably related to the growth process at the surface in the organometallic vapor phase epitaxy (OMVPE) system.
Keywords
InP/GaInAsP/InP , X-ray CTR scattering , Distribution of group-III atoms , Interface structure
Journal title
Applied Surface Science
Serial Year
2003
Journal title
Applied Surface Science
Record number
998803
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