Author/Authors :
T. Akane، نويسنده , , S. Jinno، نويسنده , , Y. Yang، نويسنده , , T. Kuno، نويسنده , , Nina S. T. Hirata، نويسنده , , Y. Isogai، نويسنده , , N. Watanabe، نويسنده , , Y. Fujiwara، نويسنده , , A. Nakamura، نويسنده , , Y. Takeda، نويسنده ,
Abstract :
ErP has been grown on InP(0 0 1) substrates by organometallic vapor phase epitaxy (OMVPE) using a new liquid organic Er source: tris(ethylcyclopentadienyl)erbium (Er(EtCp)3). Morphological change of an ErP layer on InP(0 0 1) is investigated together with that of an overgrown capping InP layer. Optimum growth condition of InP causes islanding on over-monolayer-ErP. A relatively low overgrowth temperature of InP is a key factor for attaining complete capping coverage on ErP.
Keywords :
ERP , InP , OMVPE , AFM , Er(EtCp)3
