Author/Authors :
Cho، byung Jin نويسنده , , A.، Chin, نويسنده , , Zhu، Chunxiang نويسنده , , M.F.، Li, نويسنده , , Kwong، Dim-Lee نويسنده , , Hu، Hang نويسنده , , Yu، Xiongfei نويسنده , , P.D.، Foo, نويسنده , , Yu، Ming Bin نويسنده , , Liu، Xinye نويسنده , , J.، Winkler, نويسنده ,
Abstract :
Metal-insulator-metal (MIM) capacitors with (HfO/sub 2/)/sub 1-x/(Al/sub 2/O/sub 3/)/sub x/ high-(kappa) dielectric films were investigated for the first time. The results show that both the capacitance density and voltage/temperature coefficients of capacitance (VCC/TCC) values decrease with increasing Al/sub 2/O/sub 3/ mole fraction. It was demonstrated that the (HfO/sub 2/)/sub 1-x/(Al/sub 2/O/sub 3/)/sub x/ MIM capacitor with an Al/sub 2/O/sub 3/ mole fraction of 0.14 is optimized. It provides a high capacitance density (3.5 fF/(mu)m/sup 2/) and low VCC values (~140 ppm/V/sup 2/) at the same time. In addition, small frequency dependence, low loss tangent, and low leakage current are obtained. Also, no electrical degradation was observed for (HfO/sub 2/)/sub 1-x/(Al/sub 2/O/sub 3/)/sub x/ MIM capacitors after N/sub 2/ annealing at 400(degree)C. These results show that the (HfO/sub 2/)/sub 0.86/(Al/sub 2/O/sub 3/)/sub 0.14/ MIM capacitor is very suitable for capacitor applications within the thermal budget of the back end of line process.
