Title of article :
On the electronic transport properties of polycrystalline ZnSe films
Author/Authors :
G.I. Rusu، نويسنده , , M.E. Popa، نويسنده , , G.G. Rusu، نويسنده , , Iulia Salaoru، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
9
From page :
223
To page :
231
Abstract :
Zinc selenide (ZnSe) thin films were deposited onto glass substrates by the quasi-closed volume technique under vacuum. The film structure was studied by X-ray diffraction (XRD) technique, scanning electron microscopy and atomic force microscopy (AFM). The investigations showed that the films are polycrystalline and have a cubic (zinc blende) structure. The films with stable structure can be obtained if they, after deposition, were submitted to a heat treatment. The mechanism of electrical conduction is discussed in terms of Seto’s model for polycrystalline semiconducting films. The values of optical energy gap have been determined from the absorption spectra.
Keywords :
Polycrystalline thin films , ZnSe , Electronic transport properties , Transmission , absorption
Journal title :
Applied Surface Science
Serial Year :
2003
Journal title :
Applied Surface Science
Record number :
998879
Link To Document :
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