Title of article :
Oxygen atom-induced D2 and D2O desorption on D/Si(1 1 1) surfaces
Author/Authors :
F. Rahman، نويسنده , , F. Khanom، نويسنده , , S. Inanaga، نويسنده , , H. Tsurumaki، نويسنده , , A. Namiki، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Abstract :
We studied reaction of oxygen atoms with D-terminated Si(1 1 1) surfaces from a desorption point of view. As the D (1 ML)/Si(1 1 1) surface was exposed to O atoms D2 and D2O molecules were found to desorb from the surface. The desorption kinetics of D2 and D2O molecules exhibited a feature characterized with a quick rate jump at the very beginning of O exposure, which was followed by a gradual increase with a delayed maximum and then by an exponential decrease. The O-induced D2 desorption spectra as a function of Ts appeared to be very similar to the H-induced D2 desorption spectrum from the D/Si(1 1 1) surfaces. Possible mechanisms for the O-induced desorption reactions were discussed.
Keywords :
Spectroscopy , Radio frequency , Semiconductors
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science