• Title of article

    Field emission from quantum size GaN structures

  • Author/Authors

    O. Yilmazoglu، نويسنده , , D. Pavlidis، نويسنده , , Yu.M. Litvin، نويسنده , , S. Hubbard، نويسنده , , I.M. Tiginyanu، نويسنده , , K. Mutamba، نويسنده , , H.L. Hartnagel، نويسنده , , V.G. Litovchenko، نويسنده , , A. Evtukh، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2003
  • Pages
    5
  • From page
    46
  • To page
    50
  • Abstract
    Whisker structures and quantum dots fabricated by photoelectrochemical (PEC) etching of undoped and doped metalorganic chemical vapor deposition (MOCVD)-grown GaN (2×1017 or 3×1018 cm−3) are investigated in relation with their field-emission characteristics. Different surface morphologies, corresponding to different etching time and photocurrent, results in different field-emission characteristics with low turn-on voltage down to 4 V/μm and the appearance of quantum-size effect in the I–V curves.
  • Keywords
    GaN field emitter , Quantum size
  • Journal title
    Applied Surface Science
  • Serial Year
    2003
  • Journal title
    Applied Surface Science
  • Record number

    998944

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=998944