Comparison between post-irradiation annealing and post-high electric field stress annealing of n-channel power VDMOSFETs

The behavior of the defects created in the gate oxide and at the Si/SiO2 interface of n-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) by irradiation and positive high electric field stress have been investigated. Interface traps exhibit the same behavior after both types of stress, while there are significant differences in post-stress responses of the charge trapped in the oxide, consisting of fixed and switching component.