• Title of article

    Implantation profiles for low energy electrons in metals: scaling properties

  • Author/Authors

    F. Z. Chaoui، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2004
  • Pages
    6
  • From page
    114
  • To page
    119
  • Abstract
    The scaling of electron implantation profiles with incident energies over the range 0.5–4 keVat normal angle of incidence are presented using the Monte Carlo scheme to generate stopping profiles in semi-infinite Al and Au. A simple scaling relationship which reduced the stopping profiles onto a single universal curve for that studied material is proposed with only two fitting parameters instead of four parameters previously reported in the literature. This permits accurate profiles for low energy electrons in metals to be obtained in a simple way that does not require any recourse to Monte Carlo calculations in the generation of electron stopping profiles. # 2003 Elsevier B.V. All rights reserved
  • Keywords
    Electron implantation , Monte Carlo scheme , Low energy electrons
  • Journal title
    Applied Surface Science
  • Serial Year
    2004
  • Journal title
    Applied Surface Science
  • Record number

    998998