Title of article
Implantation profiles for low energy electrons in metals: scaling properties
Author/Authors
F. Z. Chaoui، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
6
From page
114
To page
119
Abstract
The scaling of electron implantation profiles with incident energies over the range 0.5–4 keVat normal angle of incidence are
presented using the Monte Carlo scheme to generate stopping profiles in semi-infinite Al and Au. A simple scaling relationship
which reduced the stopping profiles onto a single universal curve for that studied material is proposed with only two fitting
parameters instead of four parameters previously reported in the literature. This permits accurate profiles for low energy
electrons in metals to be obtained in a simple way that does not require any recourse to Monte Carlo calculations in the
generation of electron stopping profiles.
# 2003 Elsevier B.V. All rights reserved
Keywords
Electron implantation , Monte Carlo scheme , Low energy electrons
Journal title
Applied Surface Science
Serial Year
2004
Journal title
Applied Surface Science
Record number
998998
Link To Document