Thermal decomposition of dimethylaluminum isopropoxide on Si(1 0 0)

The thermal decomposition of dimethylaluminum isopropoxide dimer, ½ðCH3Þ2AlðOiC3H7Þ 2, on Si(1 0 0) is investigated by line-of-sight temperature programmed desorption (LOS-TPD), line-of-sight isothermal reaction spectroscopy (LOS-IRS), and Auger electron spectroscopy (AES). ½ðCH3Þ2AlðOiC3H7Þ 2 does not decompose upon adsorption on Si(1 0 0) held at 100 K or during subsequent LOS-TPD. AES indicates that film growth starts when the precursor is dosed with the substrate at 650 K. LOS-IRS shows that the monomer, ½ðCH3Þ2AlðOiC3H7Þ 2, is an intermediate in the process of the dimer decomposition to aluminum-containing films, and that further decompositions occur via breaking the C–Al and O–C bonds. # 2003 Elsevier B.V. All rights reserved