Author/Authors :
J.، Muller, نويسنده , , R.، Judaschke, نويسنده , , M.، Rodriguez-Girones, نويسنده , , H.L.، Hartnagel, نويسنده , , M.، Saglam, نويسنده , , B.، Schumann, نويسنده , , K.، Duwe, نويسنده , , C.، Domoto, نويسنده , , A.، Megej, نويسنده ,
Abstract :
In this letter, we report on the record performance of GaAs-based heterostructure barrier varactors (HBVs) in tripler circuits. Both fabrication technique of planar Al/sub 0.7/Ga/sub 0.3/As/GaAs heterostructure barrier varactors (HBVs) and measurements of a corresponding tripler circuit are presented. Planar transmission lines on a thin dielectric membrane and flip-chip technique without air bridges provide reduced parasitic losses and, hence, higher tripler efficiency. Frequency tripler measurements have shown more than 1 mW at 450 GHz.
