Title of article :
The revolution in SiGe: impact on device electronics
Author/Authors :
D.L. Harame، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
9
From page :
9
To page :
17
Abstract :
SiGe is having a major impact in device electronics. The most mature application is the SiGe BiCMOS technology which is in production throughout the world. The areas of most rapid growth are in CMOS where SiGe is being considered for a wide variety of elements including raised S/D, poly-SiGe Gates, in buffer layers to create a tensile strained Si layer, and as the conducting channel in MODFETs. # 2003 Published by Elsevier B.V.
Keywords :
SiGe BiCMOS , sIgE , SiGe HBT , device scaling
Journal title :
Applied Surface Science
Serial Year :
2004
Journal title :
Applied Surface Science
Record number :
999149
Link To Document :
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