• Title of article

    The revolution in SiGe: impact on device electronics

  • Author/Authors

    D.L. Harame، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2004
  • Pages
    9
  • From page
    9
  • To page
    17
  • Abstract
    SiGe is having a major impact in device electronics. The most mature application is the SiGe BiCMOS technology which is in production throughout the world. The areas of most rapid growth are in CMOS where SiGe is being considered for a wide variety of elements including raised S/D, poly-SiGe Gates, in buffer layers to create a tensile strained Si layer, and as the conducting channel in MODFETs. # 2003 Published by Elsevier B.V.
  • Keywords
    SiGe BiCMOS , sIgE , SiGe HBT , device scaling
  • Journal title
    Applied Surface Science
  • Serial Year
    2004
  • Journal title
    Applied Surface Science
  • Record number

    999149