Title of article
The revolution in SiGe: impact on device electronics
Author/Authors
D.L. Harame، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
9
From page
9
To page
17
Abstract
SiGe is having a major impact in device electronics. The most mature application is the SiGe BiCMOS technology which is in
production throughout the world. The areas of most rapid growth are in CMOS where SiGe is being considered for a wide variety
of elements including raised S/D, poly-SiGe Gates, in buffer layers to create a tensile strained Si layer, and as the conducting
channel in MODFETs.
# 2003 Published by Elsevier B.V.
Keywords
SiGe BiCMOS , sIgE , SiGe HBT , device scaling
Journal title
Applied Surface Science
Serial Year
2004
Journal title
Applied Surface Science
Record number
999149
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