AlGaInP light-emitting diode with tensile strain barrier reducing layer

A novel tensile strain barrier reducing (TSBR) structure is grown between the window and cladding layers of multi-quantum-well (MQW)-AlGaInP light-emitting diodes (LEDs). The TSBR film (100~200 A of Ga/sub 0.65/In/sub 0.35/P) is of lattice size and valence band energy intermediate between those of window and cladding layers, thus reducing band offset and decreasing device forward bias from 2.55 V to 1.92 V at 20 mA, with concomitant improvements in dynamic resistance and junction heating. The TSBR layer increases power efficiency by 30% at 20 mA and up to 65% at high current conditions. The reduced junction heating of the with-TSBR design may be of significant advantage to device quality, reliability and lifetime, especially for high current applications.