Title of article :
SiGe PIN photodetector for infrared optical fiber links
operating at 1.25 Gbit/s
Author/Authors :
M. Jutzi، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Abstract :
SiGe PIN photodetectors grown on Si substrates are presented. 160 mA/W photoresponsivity at 1300 nm and a bandwidth of
1.25 GHz at 1 V bias are achieved.
# 2003 Elsevier B.V. All rights reserved.
Keywords :
SiGe PIN photodetector , Infrared optical fiber links , Strain-relaxed buffer
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
