Enhanced crystal nucleation in a-SiGe/SiO2 by ion-irradiation assisted annealing

Ion beam stimulated solid phase crystallization of a-Si1 xGex (0 x 1) on SiO2 has been investigated. The critical temperature to cause crystal nucleation can be successfully decreased by 150 8C for a-Si1 xGex with all Ge fractions (0–100%) by using ion stimulation. As a result, crystal growth below the softening temperature ( 500 8C) of glass substrates was achieved for samples with Ge fractions exceeding 50%. This method combined with Ge doping and ion stimulation will be a powerful tool to fabricate poly-SiGe TFTs on low cost glass substrates. # 2003 Elsevier B.V. All rights reserved