SiGe elevated source/drain structure and nickel silicide contact layer for sub 0.1 mm MOSFET fabrication

The fully depleted (FD) silicon-on-insulator (SOI)MOSFETs with Lg of 0.1 mmwere fabricated. For reducing contact resistance and source/drain parasitic series resistance, SiGe elevated source/drain structure and nickel germanosilicide contact layer on the SiGe has been introduced. For selective growth of SiGe and source/drain doping with implantation, novel process has been introduce. The contact resistivity, sheet resistance of nickel silicide and nickel germanosilicide of fabricated device is compared. # 2003 Elsevier B.V. All rights reserved