Title of article
SiGe elevated source/drain structure and nickel silicide contact layer for sub 0.1 mm MOSFET fabrication
Author/Authors
JeoungChill Shim*، نويسنده , , Hyuckjae Oh، نويسنده , , Hoon Choi، نويسنده , , Takeshi Sakaguchi، نويسنده , , Hiroyuki Kurino، نويسنده , , Mitsumasa Koyanagi، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
5
From page
260
To page
264
Abstract
The fully depleted (FD) silicon-on-insulator (SOI)MOSFETs with Lg of 0.1 mmwere fabricated. For reducing contact resistance
and source/drain parasitic series resistance, SiGe elevated source/drain structure and nickel germanosilicide contact layer on the
SiGe has been introduced. For selective growth of SiGe and source/drain doping with implantation, novel process has been
introduce. The contact resistivity, sheet resistance of nickel silicide and nickel germanosilicide of fabricated device is compared.
# 2003 Elsevier B.V. All rights reserved
Keywords
FD SOI MOSFET , SiGe , Elevated source/drain structure , Step annealing , Nickel germanosilicide
Journal title
Applied Surface Science
Serial Year
2004
Journal title
Applied Surface Science
Record number
999200
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