Low-frequency noise suppression and dc characteristics enhancement in sub-mm metamorphic p-MOSFETs with strained Si0.3Ge0.7 channel grown by MBE

For the first time, we have demonstrated the reduced low-frequency (LF) noise in sub-mm metamorphic high Ge content p- Si0.3Ge0.7 MOSFETs in comparison with p-Si MOSFETs at 293 K. Three times lower LF noise over 1–100 Hz range at VDS ¼ 50 mVand VG VTH ¼ 1:5 V was measured for the 0.55 mm effective gate length p-Si0.3Ge0.7 MOSFET compared with p-Si MOSFET. Over three times drain current enhancement in saturation region of output current–voltage characteristics at VDS ¼ 2:5 V for a 0.55 mm p-Si0.3Ge0.7 MOSFET in comparison with p-Si MOSFET is observed. # 2003 Elsevier B.V. All rights reserved.