Influence of the extrinsic base on the base current kink in SiGe BJTs

A new explanation for the abrupt increase of the base current in SiGe BJTs is proposed. It is suggested that the electron current flowing laterally along the extended base is responsible for this abrupt change. The magnitude of this effect is controlled by the location of the extrinsic base region relative to the emitter and intrinsic base regions. # 2003 Elsevier B.V. All rights reserved