Title of article
Direct extraction feature for scattering parameters of SiGe-HBTs
Author/Authors
S. Wagner ، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
5
From page
365
To page
369
Abstract
We present a direct approach to obtain scattering parameters (S-parameters) and other derived figures of merit of SiGe-HBTs
by means of small-signal (ac) analysis. Therefore, an additional simulation mode has been implemented in the three-dimensional
device simulatorMINIMOS-NT. Several additional features are provided for efficiently obtaining various small-signal parameters.
The accuracy of the results is proven by analytical methods and by comparison with measurements.
# 2003 Elsevier B.V. All rights reserved
Keywords
Small-signal simulation , HBT , parameter extraction , S-parameters
Journal title
Applied Surface Science
Serial Year
2004
Journal title
Applied Surface Science
Record number
999220
Link To Document