Abstract :
An investigation of the low-temperature operation of a 0.5 mm-gate Si:SiGe depletion-mode n-type modulation-doped fieldeffect
transistor is presented. The investigated temperatures range from T ¼ 300 to 180 K. The benefits of cryogenic operation
are discussed. Experimental indications of parallel conduction in the device are presented, as well as their dependence on
operating temperature. Measured data are compared with two-dimensional device simulations in MEDICITM carried out using
mobility values from Monte Carlo material calculations.
# 2003 Elsevier B.V. All rights reserved.
Keywords :
Microelectronics: LSI , Metal–insulator–semiconductor structures (includingsemiconductor-to-insulator) , Field-effect devices , VLSI , Heterostructures—electrical properties , ULSI , Semiconductor compounds , Integrated circuit fabrication technology , Lowtemperaturetechniques
