Author/Authors :
A.، Furukawa, نويسنده , , M.، Ono, نويسنده , , K.، Nishikawa, نويسنده , , E.، Taniguchi, نويسنده , , N.، Suematsu, نويسنده , , Y.، Yoneda, نويسنده , , T.، Murakami, نويسنده , , H.، Ueda, نويسنده , , T.، Ohnakado, نويسنده , , S.، Yamakawa, نويسنده , , J.، Tomisawa, نويسنده , , Y.، Hashizume, نويسنده , , K.، Sugahara, نويسنده , , T.، Oomori, نويسنده ,
Abstract :
An optimized single-pole double-throw (SPDT) transmit/receive (T/R) switch has been fabricated using depletion-layer-extended transistors (DETs) in a 0.18 (mu)m CMOS process. The switch features the highest performance to date of any switch using a CMOS process, of a 0.8 dB insertion-loss, 23 dB isolation and 17.4 dBm power-handling capability at 5 GHz. The low insertion-loss has been achieved with the effects of junction capacitance decrease and substrate resistance increase in the DET, the adoption of low-loss shielded-pads, and several layout optimizations. The high power-handling capability is owing to the combined effect of the adoption of the source/drain dc biasing scheme and the high substrate resistance in the DET.
