Hot carrier analysis in low-temperature poly-Si thinfilm transistors using pico-second time-resolved emission microscope

We have analyzed degradation of N-channel thin-filmtransistor (TFT) under dynamic stress using a picosecond time-resolved emission microscope. We have successfully detected emission at pulse fall edge for the first time. Emission intensity increased with the decrease of pulse fall time. As the degradation depended on the pulse fall time, this dependence clearly illustrates that hot electrons are the dominant cause of the degradation Aunder dynamic stress. Based on these dependences, we proposed a model considering electron traps in the polySi.