Title of article
The enhancement of Q factor in RPCVD SiGe varactors by the structural modification of the basecollector junction
Author/Authors
Kim، Sang-Hoon نويسنده , , Hong، Songcheol نويسنده , , Suh، Dongwoo نويسنده , , Mheen، Bongki نويسنده , , Shim، Kyu-Hwan نويسنده , , Kang، Jin-Yeong نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-238
From page
239
To page
0
Abstract
We designed two silicon germanium (SiGe) varactors enhanced in Q factor through a structural modification by using a cost-effective SiGe heterostructure bipolar transistor (HBT) process, a conventional reducedpressure chemical vapor deposition (RPCVD). As a result, the suggested structures showed a superiority in Q factor (160/GHz/pF at 2.5 GHz) to the conventional one (70/GHz/pF), even with neither a change in process nor an additional mask. We attributed the enhancement of Q factor to the structural feature of the varactors and quantitatively analyzed it with a lumped element model.
Keywords
Analytical and numerical techniques , natural convection , heat transfer
Journal title
IEEE Electron Device Letters
Serial Year
2003
Journal title
IEEE Electron Device Letters
Record number
99941
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