Title of article
Electrical characterization of germanium p-channel MOSFETs
Author/Authors
H.، Shang, نويسنده , , H.، Okorn-Schimdt, نويسنده , , J.، Ott, نويسنده , , P.، Kozlowski, نويسنده , , S.، Steen, نويسنده , , E.C.، Jones, نويسنده , , H.-S.P.، Wong, نويسنده , , W.، Hanesch, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-241
From page
242
To page
0
Abstract
In this letter, we report germanium (Ge) p-channel MOSFETs with a thin gate stack of Ge oxynitride and lowtemperature oxide (LTO) on bulk Ge substrate without a silicon (Si) cap layer. The fabricated devices show 2 * higher transconductance and ~ 40% hole mobility enhancement over the Si control with a thermal SiO/sub 2/ gate dielectric, as well as the excellent subthreshold characteristics. For the first time, we demonstrate Ge MOSFETs with less than 100-mV/dec subthreshold slope.
Keywords
heat transfer , natural convection , Analytical and numerical techniques
Journal title
IEEE Electron Device Letters
Serial Year
2003
Journal title
IEEE Electron Device Letters
Record number
99942
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