Author/Authors :
Kim، Young-Hee نويسنده , , S.، Krishnan, نويسنده , , Kang، Chang Seok نويسنده , , Cho، Hag-Ju نويسنده , , K.، Onishi, نويسنده , , Choi، Rino نويسنده , , J.C.، Lee, نويسنده , , M.S.، Akbar, نويسنده ,
Abstract :
Mobility dependence on Si substrate orientations was investigated for HfO/sub 2/ MOSFETs for the first time. High-temperature (600 (degree)C) forming gas (FG) annealing (HT-FGA) was applied on the devices on both [100] and [111] substrates to evaluate the mobility for optimal interfacial quality. Using HT-FGA, D/sub it/ of the [111] devices was reduced down below 1 * 10/sup 12/ cm/sup -2/V/sup -1/. Similar to SiO/sub 2/ devices, NMOS mobility of the [111] devices was lower than that of the [100] devices at higher effective fields, while it was reversed for PMOSFETs.
