Title of article
The dispersion properties of surface acoustic wave devices on AlN/LiNbO3 film/substrate structure
Author/Authors
K.S. Kao، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
6
From page
334
To page
339
Abstract
Highly c-axis oriented aluminum nitride (AlN) films were deposited on z-cut LiNbO3 substrates by reactive rf magnetron
sputtering. The crystalline properties investigated by X-ray diffraction (XRD) revealed that AlN film with (0 0 2) preferred
orientation was improved by an increase of the deposition time within the experimental range. However, the surface morphology
of AlN film measured by scanning probe microscopy (SPM) showed that the roughness was getting worse with increase of
deposition time. Surface acoustic wave (SAW) properties, measured by a network analyzer in the structure consisting of highly
c-axis AlN films on z-cut LiNbO3 substrates, were investigated. The phase velocity (VP) was significantly increased by the
increase of h=l, where h is the thickness of AlN film and l is the wavelength. However, the insertion loss (IL) of SAWfilters was
also increased by the increase of h=l. Experimental results on the temperature characteristics of SAWdevices are also presented.
# 2004 Elsevier B.V. All rights reserved.
Keywords
RF sputtering , Aluminum nitride , lithium niobate , Surface acoustic wave
Journal title
Applied Surface Science
Serial Year
2004
Journal title
Applied Surface Science
Record number
999539
Link To Document