Toward accurate in-depth profiling of As and P ultra-shallow implants by SIMS

A new technique is proposed for the depth profiling of low energy As and P implants. We show that monitoring the monatomic negatively charged ions of As and P , using oxygen backfilling (flooding) in combination with low energy Csþ sputtering, improves the sensitivity of SIMS profiling and removes the variation of the ion yield at the native oxide/silicon interface. # 2004 Elsevier B.V. All rights reserved