Author/Authors :
Yang، Min نويسنده , , E.P.، Gusev, نويسنده , , Ieong، Meikei نويسنده , , O.، Gluschenkov, نويسنده , , D.C.، Boyd, نويسنده , , K.K.، Chan, نويسنده , , P.M.، Kozlowski, نويسنده , , C.P.، DEmic, نويسنده , , R.M.، Sicina, نويسنده , , P.C.، Jamison, نويسنده ,
Abstract :
Dependence of CMOS performance on silicon crystal orientation of [100], [111], and [110] has been investigated with the equivalent gate dielectric thickness less than 3 nm. Hole mobility enhancement of >160% has been observed for both oxynitride and HfO/sub 2/ gate dielectrics on [110] surfaces compared with [100]. CMOS drive current is nearly symmetric on [110] orientation without any degradation of subthreshold slope. For HfO/sub 2/ gate dielectrics, an approximately 68% enhancement of pMOSFET drive current has been demonstrated on [110] substrates at L/sub poly/=0.12 >m, while current reduction in nMOS is around 26%.
