Author/Authors :
A.، Chin, نويسنده , , Zhu، Chunxiang نويسنده , , M.F.، Li, نويسنده , , Kwong، Dim-Lee نويسنده , , C.Y.، Lin, نويسنده , , M.W.، Ma, نويسنده , , Y.C.، Yeo, نويسنده ,
Abstract :
We have fabricated the fully silicided NiSi on La/sub 2/O/sub 3/ for n- and pMOSFETs. For 900(degree)C fully silicided CoSi/sub 2/ on La/sub 2/O/sub 3/ gate dielectric with 1.5 nm EOT, the gate dielectric has large leakage current by possible excess Co diffusion at high silicidation temperature. In sharp contrast, very low gate leakage current density of 2*10/sup -4/ A/cm/sup 2/ at 1 V is measured for 400(degree)C formed fully silicided NiSi and comparable with Al gate. The extracted work function of NiSi was 4.42 eV, and the corresponding threshold voltages are 0.12 and -0.70 V for respective n- and p-MOSFETs. Electron and hole mobilities of 156 and 44 cm/sup 2//V-s are obtained for respective n- and pMOSFETs, which are comparable with the HfO/sub 2/ MOSFETs without using H/sub 2/ annealing.
