Atomic and electronic structures of heteroepitaxial C60 film grown on Ni(1 1 1), Cu(1 1 1)

Thin film growth and electronic structure of C60 on Ni(1 1 1) and Cu(1 1 1) were studied by reflection high-energy electron diffraction (RHEED) and electron energy loss spectroscopy (EELS). A single-crystalline C60 film is found to grow heteroepitaxially on Ni(1 1 1) with a 4×4 structure. The EELS results show peak broadening and energy shifts of π-plasmon and interband transitions. The binding energy of the gg+hg orbital decreases through the interaction with the Cu 3d band for C60/Cu(1 1 1), while the binding energy of the hu orbital increases through the interaction with the Ni 3d band for C60/Ni(1 1 1). The shift of the binding energy of the C60 orbital can be explained by the position of the C60 orbital relative to the metal 3d band.