Author :
Davis Robert F. استاد مشاور , Brenner Donald W. استاد مشاور , Kingon Angus I. استاد مشاور , Rozgonyi George A. استاد مشاور , Whitten Jerry L استاد مشاور , Brenner Donald W. استاد راهنما
Keyword :
source temperature , CVD , gas phase deposition , concentration profile , sublimation growth , Temperature profile , MBE , supersaturated H atom , concentration distribution , molecular excitation , Temperature gradient , first principles , temperature drops , growth precursor , Aluminum nitride , pi-bond formation and breaking , diamond , wide band-gap materials , non-equilibrium , growth mechanism , MOCVD