• DocumentCode
    10416
  • Title

    FORMATION OF LOW-RESISTIVITY GERMANOSILICIDE CONTACTS TO PHOSPHORUS DOPED SILICON-GERMANIUM ALLOY SOURCE/DRAIN JUNCTIONS FOR NANOSCALE CMOS

  • Author

    Veena Misra استاد مشاور , Douglas Barlage استاد مشاور , Gregory Parsons استاد مشاور , Mehmet Ozturk استاد راهنما

  • University
    Raleigh North carolina state university
  • Grade
    نامعلوم
  • Major
    PhD )Electrical Engineering(
  • Number of pages
    0
  • Publish Date
    2003
  • Keyword

    SiGe , germanosilicide , contact reistance , silicide , MOSFET , silicon germanium , source drain

  • Note
    01
  • Language
    انگليسي
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=17&DC=10416