DocumentCode :
11405
Title :
On the Interactions of Point Defects, Dopants and Light Element Impurities in Silicon as Stimulated by 200 kV Electron Irradiation.
Author :
Nadia El -Masry استاد مشاور , George Rozgonyi استاد راهنما , Gerd Duscher استاد مشاور
University :
Virginia Polytechnic Institute and state University
Grade :
نامعلوم
Major :
PhD )Materials Science and Engineering(
Number of pages :
0
Publish Date :
2004
Keyword :
Point Defects , electron irradiation , nitrogen doped silicon
Note :
01
Language :
انگليسي
Link To Document :
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