DocumentCode :
12039
Title :
Integration of Ferroelectric Materials into High Density Non-Volatile Random Access Memories
Author :
Sanjay Raman استاد مشاور , Seshu B. Desu استاد مشاور , ynolds Committee استاد مشاور , William T. Reynolds استاد راهنما
University :
Virginia Polytechnic Institute and state University
Grade :
نامعلوم
Major :
PhD )Materials Science and Engineering (
Number of pages :
0
Publish Date :
2000
Keyword :
Bismuth-layered materials , thin film electrodes , perovskites
Note :
01
Language :
انگليسي
Link To Document :
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