• DocumentCode
    12527
  • Title

    Conventional and Pendeo-Epitaxial Growth of Non-Polar GaN)11-20( Thin Films on AlN/4H-SiC)11-20( Substrates and Their Characterization and Reduction in Defect Density

  • Author

    Robert F. Davis استاد راهنما

  • University
    Virginia Polytechnic Institute and state University
  • Grade
    نامعلوم
  • Major
    Master of Science )Program Materials Science and Engineering(
  • Number of pages
    0
  • Publish Date
    2005
  • Keyword

    Thin Film Growth , Non-polar GaN , Growth Rates , Pendeo-Epitaxy , MOVPE , Defect Density Reduction , TEM , SEM , AFM

  • Note
    01
  • Language
    انگليسي
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=17&DC=12527